Bulk single crystals of ammonium acid phthalate grown by the Sankaranarayanan-Ramasamy method for optical limiting applicationsARUNKUMAR, A; RAMASAMY, P.Journal of crystal growth. 2014, Vol 401, pp 195-199, issn 0022-0248, 5 p.Conference Paper

Calculations of parameters of RHEED oscillations using different models of the scattering potentialMITURA, Zbigniew.Journal of crystal growth. 2014, Vol 401, pp 364-366, issn 0022-0248, 3 p.Conference Paper

Combustion synthesis of Si-related crystalline nanostructuresSOSZYNSKI, Michał; LABEDZ, Olga; HUCZKO, Andrzej et al.Journal of crystal growth. 2014, Vol 401, pp 445-448, issn 0022-0248, 4 p.Conference Paper

Cyclic growth and dissolution of camphor crystals in quinary, ternary, and binary solutions: A study on crystal behavior in storm glassMITSUYA, Takuro; TAKAHASHI, Kyohei; NAGASHIMA, Kazushige et al.Journal of crystal growth. 2014, Vol 401, pp 233-237, issn 0022-0248, 5 p.Conference Paper

Growth and characterization of struvite-Na crystalsCHAUHAN, Chetan K; JOSHI, Mihirkumar J.Journal of crystal growth. 2014, Vol 401, pp 221-226, issn 0022-0248, 6 p.Conference Paper

Investigation on the SR method growth, etching, birefringence, laser damage threshold and thermal characterization of strontium bis (hydrogen L-malate) hexahydrate single crystalSENTHIL, A; RAMASAMY, P.Journal of crystal growth. 2014, Vol 401, pp 200-204, issn 0022-0248, 5 p.Conference Paper

Red fluorescence in LaF₃: Nd³⁺, Sm³⁺ nanocrystals grown by rapid microwave assisted synthesis: A comparative analysis of vibrational, thermal and electrical propertiesKHANDPEKAR, M. M; GAURKHEDE, S. G.Journal of crystal growth. 2014, Vol 401, pp 453-457, issn 0022-0248, 5 p.Conference Paper

Effect of sample volume on the metastable zone width of potassium nitrate aqueous solutionsMIELNICZEK-BRZOSKA, E.Journal of crystal growth. 2014, Vol 401, pp 271-274, issn 0022-0248, 4 p.Conference Paper

Experimental study of the structural characteristics of Al melts on the basis of Fourier analysis of acoustic emission signalsVORONTSOV, Vadim; ZHURAVLEV, Danil; CHEREPANOV, Alexander et al.Journal of crystal growth. 2014, Vol 401, pp 124-127, issn 0022-0248, 4 p.Conference Paper

Germanium-doped crystalline silicon: Effects of germanium doping on boron-related defectsXIAODONG ZHU; XUEGONG YU; DEREN YANG et al.Journal of crystal growth. 2014, Vol 401, pp 141-145, issn 0022-0248, 5 p.Conference Paper

In situ diagnostics of the SiC nanostructures growth processDABROWSKA, A; BZYMEK, A; HUCZKO, A et al.Journal of crystal growth. 2014, Vol 401, pp 376-380, issn 0022-0248, 5 p.Conference Paper

Ordering of Brownian particles from walls due to an external forceSATO, Masahide; KATSUNO, Hiroyasu; SUZUKI, Yoshihisa et al.Journal of crystal growth. 2014, Vol 401, pp 87-92, issn 0022-0248, 6 p.Conference Paper

Structural and morphologic characterization of zirconia-silica nanocomposites prepared by a modified sol-gel methodSTOIA, Marcela; BARVINSCHI, Paul; BARVINSCHI, Floricica et al.Journal of crystal growth. 2014, Vol 401, pp 462-468, issn 0022-0248, 7 p.Conference Paper

The historical development of the Czochralski methodUECKER, Reinhard.Journal of crystal growth. 2014, Vol 401, pp 7-24, issn 0022-0248, 18 p.Conference Paper

Three-dimensional phase field modeling of silicon thin-film growth during directional solidification: Facet formation and grain competitionLIN, H. K; LAN, C. W.Journal of crystal growth. 2014, Vol 401, pp 740-747, issn 0022-0248, 8 p.Conference Paper

Effect of nucleation on chirality conversion induced by random fluctuationKATSUNO, Hiroyasu; UWAHA, Makio.Journal of crystal growth. 2014, Vol 401, pp 59-62, issn 0022-0248, 4 p.Conference Paper

Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined systemKANISAWA, Kiyoshi.Journal of crystal growth. 2014, Vol 401, pp 381-387, issn 0022-0248, 7 p.Conference Paper

Formation of ZnO rods with varying diameters from ε-Zn(OH)₂JING WANG; LAN XIANG.Journal of crystal growth. 2014, Vol 401, pp 279-284, issn 0022-0248, 6 p.Conference Paper

Formation of regular polyicosahedral and defected crystalline structures in growing Lennard-Jones clustersPOLAK, W.Journal of crystal growth. 2014, Vol 401, pp 44-50, issn 0022-0248, 7 p.Conference Paper

Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gasHABUKA, Hitoshi; TSUJI, Masaki; HIROOKA, Azumi et al.Journal of crystal growth. 2014, Vol 401, pp 523-526, issn 0022-0248, 4 p.Conference Paper

Polytypism in SiC: Theory and experimentLEBEDEV, A; YU TAIROV.Journal of crystal growth. 2014, Vol 401, pp 392-396, issn 0022-0248, 5 p.Conference Paper

Proceedings of 17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)SANGWAL, Keshra; GILLE, Peter; MILLER, Wolfram et al.Journal of crystal growth. 2014, Vol 401, issn 0022-0248, 922 p.Conference Proceedings

Cluster diffusion on two-dimensional surface with immobile impuritiesKATSUNO, Hiroyasu; SATO, Masahide.Journal of crystal growth. 2014, Vol 401, pp 504-507, issn 0022-0248, 4 p.Conference Paper

Growth of silicon germanium by liquid phase diffusion with applied electric fieldARMOUR, Neil; DOST, Sadik.Journal of crystal growth. 2014, Vol 401, pp 753-757, issn 0022-0248, 5 p.Conference Paper

Investigation of TMIn pulse duration effect on the properties of InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor depositionJUNSHUAI XUE; JINCHENG ZHANG; YUE HAO et al.Journal of crystal growth. 2014, Vol 401, pp 661-664, issn 0022-0248, 4 p.Conference Paper